等离子清洁器

Plasma cleaning machines consist of a vacuum chamber, plasma power supply, vacuum system, gas filling system, and control system. The basic working principle is that, under vacuum conditions, plasma, through controlled and qualitative methods, ionizes gases. A vacuum pump evacuates the working chamber to a vacuum level of 0.02-0.03 mbar. Then, under the action of the plasma power supply, the gas is ionized to form plasma (the fourth state of matter). The plasma power supply provides energy to ionize the gas into the plasma state. A significant characteristic of the plasma state is its highly uniform glow discharge, emitting visible light ranging from blue to deep purple depending on the gas. The material processing temperature is close to room temperature. These highly active microparticles interact with the treated surface, resulting in various surface modifications such as hydrophilicity, water repellency, low friction, high cleanliness, activation, and etching.

Reactive ion etching technology is a highly anisotropic and selective dry etching technique. It uses molecular gas plasma in a vacuum system for etching, and utilizes ion-induced chemical reactions to achieve anisotropic etching. That is, it uses ion energy to form an easily etchable damage layer on the surface of the etched layer and promote chemical reactions. At the same time, ions can also remove surface products to expose a clean etched surface.