DM 500磁控溅射系统
Factory supplier of 4-target magnetron sputtering systems with DC/RF co-sputtering technology for precision thin film deposition and research applications.
产品描述
System main parameters:
- Ultimate vacuum: ≤5×10⁻⁵ Pa (obtained within 12 hours under cleaning + baking degassing conditions);
- Vacuuming time: within 40 minutes, ≤5×10⁻⁴ Pa;
- Substrate heating temperature: ≤600℃ (heated by tungsten iodine lamp);
- Substrate size: ≤φ3inch circular substrate;
- Target size: 2 inches or 3 inches;
- Number of targets: 4;
- Vacuum chamber dimensions: 500×500×H450 (may be adjusted appropriately according to actual conditions);
- Substrate holder movement distance: ≤50mm (axial direction);
- Angle between the target axis and the substrate rotation axis: co-sputtering;
- Air system: 4 air intakes, one of which is for venting;
System main configuration description
| Project | Specifications and Instructions | |
| vacuum chamber | sputtering vacuum chamber | 500×500×H450mm, dimensions may be adjusted according to design requirements, side opening door. |
| Ultra-high vacuum throttle valve | DN250, electrically controlled, with optional automatic constant pressure function. | |
| molecular pump | 1600L/S molecular pump | |
| mechanical pump | The BSV40 rotary vane pump functions as both a pre-pump and a backing pump. | |
| baffle valve | DN40 electromagnetic baffle valve, pre-extraction pipeline on/off | |
| gate valve | 6mm double ferrule interface electric shut-off valve | |
| Lighting and baking equipment | Baking Options | |
| Various types of flanges and observation windows | DN16, 35, 63, 100, 200, 250 | |
| Stainless steel pipes and fittings | Precision stainless steel pipes, corrugated pipes, and pipe fittings of various specifications | |
| Vacuum measurement and air intake | Digital display composite vacuum gauge | 5227 composite vacuum gauge or imported full-range gauge tube are optional. |
| Bare metal gauge | ZJ52T, ZJ27 metal interface | |
| mass flow controller | 3 sets of D07-7B mass flow controllers | |
| Piping and fittings | Mixing chamber | |
| gate valve | 6mm double ferrule interface, electric shut-off valve | |
| Intake and other control interfaces | The pressure regulating valve is electrically controlled and has feedback capability. | |
| Sample rack | Rotating substrate holder | Substrate rotation, substrate holder lifting, and optional substrate bias voltage. |
| Lifting device | Electric lift with position display | |
| Sputtering substrate heating device | ≤600℃ heating device optional | |
| Temperature control power supply | Shimadzu temperature controller from Japan, PID temperature control. | |
| Sputtering system | Magnetron sputtering target | Four integrated sputtering targets, 2-inch or 3-inch optional, with baffles. |
| Sputtering power supply | Two 500W DC power supplies and two 500W auto-matching RF power supplies | |
| Equipment rack | Split layout | |
| Water-gas system | Including cooling water machine | |
| control system | Standard touchscreen automatic control | |
