DM400 Magnetron sputtering system

Factory supplier of ultra-high vacuum magnetron sputtering systems with multi-target co-sputtering technology and customized PVD solutions for advanced thin film applications.

Product Description

Main parameters of the system:

l Ultimate vacuum degree: ≤5×10-5Pa (obtained within 12 hours under cleaning + baking and degassing conditions);

l Vacuuming time: within 40 minutes, ≤5×10-4Pa;

l Substrate heating temperature: ≤600℃ (heating by iodine tungsten lamp);

l Substrate size: ≤Φ3inch wafer;

l Target size: 2 inches or 3 inches;

l Number of targets: 3;

l Vacuum chamber size: 400×400×H380~450 (may be adjusted appropriately according to actual conditions);

l Substrate rack moving distance: ≤50mm (axial direction);

l Angle between target axis and substrate rotation axis: co-sputtering;

l Gas system: 4 air intakes, 1 of which is for exhaust;

System main configuration description

ItemSpecifications and Description
Vacuum ChamberSputtering vacuum chamber400×400×H400mm, the size should be adjusted according to the design requirements, and the door should be opened
Ultra-high vacuum throttle valveDN200, electric control, optional automatic constant pressure function
Molecular pumpMolecular pump 1200L/S
Mechanical pumpBSV30 rotary vane pump, also acts as pre-pump and fore pump
Flap valveDN40 electromagnetic flapper valve, pre-pumping pipeline on and off
Stop valve6mm double ferrule interface electric stop valve
Lighting and baking equipmentBaking options
Various flanges and observation windowsDN16, 35, 63, 100, 200
Stainless steel pipes and pipe jointsVarious specifications of precision stainless steel pipes, bellows, pipe joints
Vacuum measurement and air intakeDigital compound vacuum gauge5227 compound vacuum gauge or imported full range gauge optional
Bare Metal GaugeZJ52T, ZJ27 metal interface
Mass Flow ControllersD07-7B mass flow controller 3 sets
Pipes and connectorsMixing chamber
Stop valve6mm double ferrule interface electric stop valve
Air intake and other control interfacesPressure regulating valve electric control, feedback
Sample rackRotating substrate holderSubstrate rotation, substrate rack lifting, substrate bias optional
Lifting deviceElectric lifting, with position display
Sputtering substrate heating device≤600℃ Heating device optional
Temperature Control Power SupplyJapanese Shimaden temperature control, PID temperature control
Sputtering systemMagnetron sputtering target3 sets of integrated sputtering targets, 2 inches or 3 inches, with baffles
Sputtering power supply2 500W DC power supplies and 1 500W automatic matching RF power supply
Equipment rackIntegrated layout
Water and gas systemWith cooling water machine
Control SystemStandard touch screen automatic control
Contact Form
Contact Form