ALD System

Product Summary ALD (Atomic Deposition) equipment can deposit thin films on planar and three-dimensional structural materials, and can be used to grow various oxides and their composite films. Applications include high-K gate insulating layers, OLED encapsulation layers, solar cell passivation layers, lithium-ion batteries, optical component coatings, MEMS, etc.

Product Introduction Equipment Features:

★ Equipped with a high-performance thin-film vacuum gauge and an atmospheric pressure detection vacuum gauge, enabling real-time observation of ALD. Pressure Changes During Process

★Automatic control software with CDA alarm and temperature runaway prevention hardware protection to ensure ALD process safety

★Deposition materials: HfO2, ZrO2, SnO2, Al2O3, ZnO, TiO2, etc., with film non-uniformity <±2%

★Provides TEM analysis for 38℃ hafnium oxide process for advanced integrated circuit process nodes of 14nm and below, preventing electron beam damage and deformation of low-temperature photoresist; 3nm hafnium oxide deposition process time <15min

Equipment Parameters:

★Vacuum Chamber: 4-inch sample deposition reaction chamber, sample temperature can be heated to 150℃, temperature control accuracy ±0.5℃

★Precursor Source: Configured with 3 precursor sources: 2 heated metal precursor sources and 1 room temperature water precursor source

★Pumping Speed: Configured with a high-performance bipolar rotary vane vacuum pump, pumping speed not less than 65m3/h