15KW MPCVD Machine

Product Description

Parameter Description of ACME-2150 Microwave Plasma (MPCVD) Equipment

 

  1. Equipment Introduction

 

The ACME-2150, 15KW Microwave Plasma Chemical Vapor Deposition (MPCVD) equipment is a multi-purpose, high stability, medium pressure microwave plasma (MPCVD) comprehensive processing equipment designed and developed to meet the specific requirements of users. It has advanced performance, complete functions, reasonable structure, convenient use, safety and reliability, and beautiful appearance, especially suitable for chemical vapor deposition (CVD) of single crystal and polycrystalline diamond films and diamond like films; Material surface treatment and modification; The growth of low-temperature oxides and other fields.

 

  1. Equipment composition and main characteristics:

 

2.1. Microwave power source

 

The system adopts a 15kW/2450MHz switch type microwave power source. Its microwave power is continuously adjustable from 0.5 to 15 kW; Stability better than ± 1%; Ripple degree is better than 2%, with good control performance; PLC provides convenient control; Adopting advanced magnetron filament voltage reduction tracking technology and high-precision magnetic field feedback adjustment and stability technology; We have adopted a comprehensive line safety locking control system, which ensures a long service life, excellent electrical performance, safety and reliability, and simple and convenient operation.

 

2.2. Waveguide transmission unit

 

The system adopts an excellent microwave transmission system consisting of a high-performance microwave circulator, a three pin mixer, a water load with reflected wave sampling, and a connected waveguide section waveguide. It ensures good isolation of the reflected wave from the magnetron, ensuring its stable operation. It can also conveniently adjust the optimal matching when the plasma load changes, achieving the optimal transmission of microwave power. Through the sampling of the reflected wave, the reflected power magnitude and real-time working status are displayed digitally.

 

2.3. Mode transformation and down injection microwave coupling cavity

 

This is a new generation of mature microwave plasma coupling cavities, which consists of a cylindrical cavity operating in TM mode, a gate type coaxial waveguide coupler with adjustable coaxial coupling probes, and a plate type quartz window. By adjusting the waveguide short-circuit piston and coaxial coupling probe, microwave power can be efficiently coupled to the plasma discharge cavity over a wide operating range, generating high-density, high ionization, and large-area uniform and stable microwave discharge. It adopts double-layer water-cooled chamber walls to ensure stable operation.

 

2.4. Multi port plasma discharge chamber

 

This system adopts a large volume discharge chamber with a double-layer water-cooled structure welded from stainless steel. The upper end is connected to the microwave reaction chamber, which is the continuation part of the cylindrical chamber. It also has the following functional ports:

 

1) The cavity can facilitate the discharge of no less than 75mm substrate samples, and is equipped with a mesh microwave shielding window, allowing for clear observation of the discharge operation inside the cavity during operation. Infrared temperature measurement is used for substrate temperature measurement at 300-1400 ℃

 

2) Adopting a specially designed inflation flange, it provides the main mixing and inflation pipelines, as well as inflation rings near the substrate, as an auxiliary inflation pipeline to form a double-layer gas feeding system.

 

The above design makes the water-cooled discharge chamber of the port have a large volume, complete functions, and is particularly suitable for the needs of small-scale plasma processing.

 

2.5. Sample holder adjustment

 

This device can electrically continuously adjust the cavity plate and sample substrate stage separately, achieving the optimal state of the plasma discharge area, which is simple, reliable, and easy to control. It can meet the requirements of various plasma processing processes.

 

2.6. Vacuum acquisition and measurement

 

The system uses a vacuum pump with a pumping speed of 8L/s as the pumping system, and the maximum vacuum is better than 6×10-1Pa. The system is equipped with medium and low pressure measurement gauges from the atmosphere to 10-1Pa, as well as pressure resistance vacuum gauges from 100Pa to 100kPa. The measuring instrument is placed in the cabinet for easy control and reading.

 

Static sealing adopts silicone rubber and metal sealing; The dynamic seal adopts a metal corrugated pipe structure. The work pressure control is completed using high-precision valves and controllers, with stable air pressure control and convenient adjustment.

 

2.7. Multi channel gas mass flow control (MFC)

 

To ensure the process requirements of MPCVD, the system adopts a 4-way gas mass flow control system supply and control system (MFC) composed of H2 (1SLM), CH4 (100SCCM), O2 (50SCCM), and N2 (50SCCM). The reliable 1/4 ‘VCR interface is embedded in the equipment cabinet, which is short, compact, and easy to control and adjust.

 

2.8. Control System and Cabinet

 

The system adopts a compact and concise main structure, as well as independent control units. Adopting PLC and touch screen multi parameter control, the entire equipment has a beautiful appearance and simple and reliable operation. The main control cabinet is equipped with automatic protection for overcurrent, overheating, water interruption, as well as power and fault indication functions. Microwave leakage is superior to national standards.

 

  1. Overall technical parameters of the equipment

 

1) Microwave sources and systems

 

Working frequency: 2450 ± 50MHz

 

Output power: 0.5~15kW continuously adjustable

 

Power stability: better than ± 1% (at rated power level)

 

Ripple degree: better than ± 2%

 

Control method: PLC control, touch screen operation

 

Output waveguide interface: standard flange

 

Input power supply: 380VAC/50Hz, three-phase four wire, separate ground wire, 25KW

 

Cooling water flow rate: 45L/min

 

System standing wave coefficient: VSWR ≤ 1.5

 

Microwave leakage: 6KW microwave ≤ 5mW/cm2 (15KW microwave ≤ 10mW/cm2)

 

2) Microwave vacuum discharge cavity

 

Size and working mode: approximately Φ 400 x 350 (H) TM mode

 

3) Vacuum acquisition: 8L/s vacuum pump

 

The maximum vacuum degree is better than 6×10-1Pa

 

4) Gas mass flow rate: 4-way MFC (gas type and range can be determined by the user)

 

H2 (1SLM), CH4 (100SCCM)

 

O2 (50SCCM), N2 (50SCCM)

 

5) Sample stage device: Sample stage diameter Φ 80 mm, water-cooled structure;

 

Electric lifting adjustment distance: 0-80 mm

 

6) Substrate temperature measurement: Infrared temperature measurement range 300-1400 ℃ (monochromatic)

 

7) Main power supply: 380VAC ± 5%/50Hz, three-phase four wire, separate ground wire, 25KW

 

8) Total cooling water: 15L/min (45L/min), clean soft water, inlet water temperature of 20 ℃± 5 ℃;

 

9) External dimensions:~2.00 (L) x 1.2 (W) x 2.05 (H) m

 

10) Work technical parameters:

 

(1) The plasma discharge area of the system is not less than the diameter Φ 75mm; Stable discharge without deviation;

 

(2) Working temperature: 600-1200 ℃ (infrared temperature measurement);

 

(3) Working pressure: 1kPa~25kPa;

 

(4) Realize long-term (>24 hours) continuous and stable operation under set output power, gas flow rate, and pressure conditions.

 

  1. Equipment composition and configuration

 

  • Configuration Checklist

 

NO.   Component Name Specification and modelQTYRemarks
1.Programmable microwave source15kW/ 2450MHz1ACME
1-1Magnetron20911Imported
2.Microwave transmissionCirculators, pin mixers, water loads, transition waveguides, etc1Chengdu
3.Mode converter and microwave coupling cavityMatching power supply1Chengdu
4.Plasma working chamberIncludes inflatable flanges, quartz windows, and ports.1ACME
5.Sample stage and adjustmentElectric continuous lifting adjustment1ACME
6.Vacuum acquisitionVacuum pumps, valves, pipelines, and vacuum measurement systems1
6-1Vacuum pump8L/s1Zhongkekeyi
6-2Vacuum measurementVacuum gauge 1Inficon
6-3Work pressure controlPressure regulating valve and controller 1ACME
7.Gas MFC unit4-way quality flow control and valves.1Qixing huachuang
8.Infrared thermometer300~1400℃Kentech
9.Main control unitPLC main control, 10 inch touch operation screen, and cabinet1Siemens

 

  • Spare parts list

 

NO.NameSpecification and modelQTYRemarks
1.Quartz windowSystem support1set
2.Metal and rubber sealing ringSystem support1set

Note: The entire equipment is guaranteed for one year (with the magnetron guaranteed by the supplier).

 

5、 Equipment acceptance criteria:

 

1). Extreme pressure: The maximum pressure measured by an external vacuum gauge should be less than 1.0 x 10-2Torr (vacuum pump continuously pumping for 20 minutes);

 

2). Vacuum leakage rate: The leakage rate of the vacuum chamber should be less than 100mtorr/h (holding pressure for more than 10 hours)

 

3). MW radiation: Microwave radiation should be less than 5mW/cm2, measured by a microwave measuring instrument (tested at 10 kW), and microwave radiation should be less than 10mW/cm2, measured by a microwave measuring instrument (tested at 14 kW)

 

4). Leakage: Confirm that the water pipe is not leaking

 

5). Safety interlocking: Confirm that each interlocking action is correct

 

6). System testing: System startup and operation function testing

 

7). Polycrystalline diamond growth: Polycrystalline diamond growth is tested on 3-inch Si sheets or molybdenum trays for more than 24 hours. The diamond distribution on the sample surface is uniform, with no nitrogen vacancy related impurity peaks. The growth of Si sheets or molybdenum trays is provided by the manufacturer.

 

8). The equipment operates continuously for 72 hours to produce diamond single crystals or polycrystals, with a growth rate of 2 micrometers per hour.

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